| abstract |
(57) [Summary] [Structure] A chemically amplified positive resist composition containing, as a dissolution accelerator, polyhydroxystyrene having a partially protected hydroxyl group represented by the following general formula (1). Embedded image (In the formula, R represents an acid labile group , p / (p + q) is 0.1 or less, and the weight average molecular weight is less than 10,000.) Effect Chemically amplified positive resist composition of the present invention Is a microfabrication technology that is sensitive to high-energy rays such as deep ultraviolet rays, electron beams, and X-rays, especially KrF excimer laser, and has excellent sensitivity, resolution, and plasma etching resistance, as well as excellent heat resistance of resist patterns. It has suitable high resolution and is highly practical. |