| abstract |
An aqueous dispersion for chemical mechanical polishing useful in the manufacture of semiconductor devices, capable of polishing at a high polishing rate while suppressing corrosion of a metal film such as cobalt and maintaining good post-polishing flatness. And a chemical mechanical polishing method using the same. An aqueous dispersion for chemical mechanical polishing according to the present invention comprises: (A) abrasive grains; and (B) one or more carboxyl groups having π electrons and comprising a carboxyl group and a hydroxyl group. An organic acid having 4 or more carbon atoms having at least one selected group of 2 or more, (C) an amino acid, (D) an anionic surfactant, and (E) an oxidizing agent, and pH Is 6.5 or more and 9.5 or less. [Selection figure] None |