| abstract |
When forming a negative resist pattern using immersion exposure and a developer containing an organic solvent, development defects can be suppressed, film loss is suppressed, and the cross-sectional shape is rectangular. An object of the present invention is to provide a protective film forming composition capable of forming an excellent resist pattern. The present invention provides a protective film forming composition for a negative resist pattern forming method using a developer containing an organic solvent, comprising [A] a fluorine atom-containing polymer and [B] a solvent. [B] The solvent contains at least one selected from the group consisting of a chain ether solvent, a hydrocarbon solvent, and an alcohol solvent having 5 or more carbon atoms. [B] The solvent preferably contains a chain ether solvent. [B] The solvent preferably contains an alcohol solvent having 5 or more carbon atoms. [B] The solvent preferably contains a chain ether solvent and an alcohol solvent having 5 or more carbon atoms. [Selection figure] None |