| abstract |
A thermoelectric conversion element having excellent thermoelectric conversion performance and a method for manufacturing the same are provided. A thermoelectric conversion layer 4 containing an inorganic oxide semiconductor as a main component and having a void structure is laminated on a substrate 2 having a porous anodic oxide film 3 made of aluminum. When a void structure is formed in the thermoelectric conversion layer, the thermal conductivity is lowered and the conductivity and Seebeck coefficient are very excellent. The inorganic oxide semiconductor includes In2O3, SnO2, ZnO, SrTiO3, WO3, MoO3, In2O3-SnO2, fluorine-doped tin oxide, antimony-doped tin oxide, antimony-doped zinc oxide, gallium-doped zinc oxide, In2O3-ZnO, and gallium-doped It is selected from the group consisting of In2O3-ZnO. [Selection] Figure 1 |