http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101517784-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b3e3de86fb3a7d008414342c8035051 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-855 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-22 |
| filingDate | 2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ede2df946b4b3ef7e1dc99e052b3da3c |
| publicationDate | 2015-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101517784-B1 |
| titleOfInvention | Thermoelectric materials having high figure of merit and manufacturing method thereof |
| abstract | The present invention relates to an oxide semiconductor thermoelectric device having excellent thermoelectric performance and a method of manufacturing the same, and an oxide semiconductor thermoelectric device having an excellent thermoelectric performance of the present invention comprises: a first electrode; A first oxide semiconductor layer formed of a metal oxide on the first electrode; A first thin film layer formed of an n-type / p-type silicon thin film or a metal thin film on the first oxide semiconductor layer; A metal oxide layer formed of Zn oxide or In oxide on the first thin film layer; A second thin film layer formed of an n-type / p-type silicon thin film or a metal thin film on the metal oxide layer; A second oxide semiconductor layer formed of a metal oxide on the second thin film layer; And a second electrode formed on the second oxide semiconductor layer. According to the present invention, by applying a metal oxide semiconductor of In oxide or Zn oxide system to a thermoelectric material basically, by inserting a heteromolecular thin film layer having a large electrical conductivity between a plurality of stacked metal oxide layers, the electric conductivity of the thermoelectric material can be increased In order to lower the thermal conductivity, a thin film layer doped with a large amount of impurities is inserted into the metal oxide layer of In oxide or Zn oxide system in a multilayer structure, and thus a device having excellent thermoelectric performance can be manufactured through a simple laminate structure. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170004464-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102198394-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102019885-B1 |
| priorityDate | 2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.