| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_915269922949d81a90260e5cd5d2df40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B22F9-08 |
| filingDate |
2007-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46f02b7b8bd05887ef9f61a43e1a9705
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b495f1ba7c782a7803d4f66771615fe |
| publicationDate |
2008-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008311247-A |
| titleOfInvention |
Thermoelectric material and manufacturing method thereof |
| abstract |
A method of manufacturing a thermoelectric material with less deterioration of thermoelectric characteristics due to contamination of impurities, and a thermoelectric material obtained using the method. A thermoelectric material comprising a half-Heusler compound having the following configuration. (1) The half-Heusler compound has an AgAsMg type crystal structure. (2) The half-Heusler compound has 6 valence electrons per atom. (3) In the half-Heusler compound, at least two of the three sites of the AgAsMg crystal structure each include two or more types of atoms having different valence electrons. (4) The O concentration ([O]) and the Si concentration ([Si]) in the half-Heusler compound satisfy the following formula (a). 2.5 ≦ 3.305-5.10 [O] −0.540 [Si] (a) [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104321890-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011084759-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013102155-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2014014126-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570667-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014014126-A1 |
| priorityDate |
2007-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |