| abstract |
(57) [Summary] [PROBLEMS] In a hydrogen ion implantation separation method, after separation, S The damage layer and surface roughness remaining on the surface of the OI layer A method for manufacturing a high-quality SOI wafer by removing a layer while maintaining the film thickness uniformity of the layer is provided. SOLUTION: In a method of manufacturing an SOI wafer by a hydrogen ion implantation separation method, after a bonding heat treatment, an oxide film is formed on an SOI layer by a heat treatment in an oxidizing atmosphere, the oxide film is removed, and then a reducing atmosphere is formed. A method of manufacturing an SOI wafer by applying the following heat treatment. In a method of manufacturing an SOI wafer by a hydrogen ion implantation separation method, after a separation heat treatment, an oxide film is formed on the SOI layer by a heat treatment in an oxidizing atmosphere, and the oxide film is removed. A method for producing an SOI wafer to which a heat treatment is applied. And SOI manufactured by these methods. Weeha. |