| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb864bc30c9edd626953dd92f13023f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_da049c60afcfc8a71b068a4c644f4cf8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0845920df684539ad2315e1daf12a3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_16db685ec595e3ecbb7e7cccc3fda92d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-46 |
| filingDate |
2008-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dd0bc63d7b2d3ced8d36370995e7edf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c087cdf9fdeec87606c52410923af57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43133db16f78aeaf5435e46ee00885c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04e26ef8e7df041d520a4b3be2291af7 |
| publicationDate |
2012-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8283238-B2 |
| titleOfInvention |
Layer transfer process for semiconductor device |
| abstract |
A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a semiconductor film transferred first and a semiconductor film transferred later are provided adjacently, the latter transfer is carried out using a bond substrate with its end portion partially removed. The width in a perpendicular direction to the bond substrate used for the later transfer, of the region of the bond substrate corresponding to the removed end portion is larger than the thickness of the semiconductor film which is transferred first. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103289-B2 |
| priorityDate |
2007-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |