| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate |
2008-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dec4d1ff9bbf4d655bc09a747cbae06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2011-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7863155-B2 |
| titleOfInvention |
Manufacturing method of semiconductor substrate and semiconductor device |
| abstract |
It is an object of the present invention to obtain a large-sized SOI substrate by providing a single-crystal silicon layer over a large-sized glass substrate in a large area. After a plurality of rectangular single-crystal semiconductor substrates each provided with a separation layer are aligned over a dummy substrate and both of the substrates are fixed with a low-temperature coagulant, the plurality of single-crystal semiconductor substrates are bonded to a support substrate; the temperature is raised up to a temperature, at which the low-temperature coagulant does not to have a bonding effect, so as to isolate the dummy substrate and the single-crystal semiconductor substrates; heat treatment is performed to separate part of the single-crystal semiconductor substrates, along a boundary of the respective separation layers; and single-crystal semiconductor layers are provided over the support substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8759126-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010006940-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110478-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8030169-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8283238-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011260180-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009104750-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8633542-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9772489-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014284632-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009004823-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8884371-B2 |
| priorityDate |
2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |