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filingDate 2012-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9837300-B2
titleOfInvention Method for manufacturing SOI substrate
abstract A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.
priorityDate 2007-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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