| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a9556d88e5eb59824eebfdfaf4857f6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_02168214e43f0a563f3f344683cf2e68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5013810ef82f3d411ba315d9c12ea6ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1dc627475cff8137e23b75280ad5b34e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_edf2c6256aff6b652c5daca2c84fed0f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate |
2010-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c90936d4143c5a1a5f902028fe60810
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e865cbaf3c6163b4b7215230ef5e245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2b28cafd6c76e3ffafb493403a2d5a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bdbf7928b73c6fd43d758097e188620
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8919d79b13e5e1f824ce359f623eb6f1 |
| publicationDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8361873-B2 |
| titleOfInvention |
Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device |
| abstract |
It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11167375-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9257452-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11426818-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094550-B2 |
| priorityDate |
2007-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |