| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate |
2008-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e432e03d83281a7953d3188091956c0e |
| publicationDate |
2011-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7989305-B2 |
| titleOfInvention |
Method for manufacturing SOI substrate using cluster ion |
| abstract |
A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOI substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513787-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013025575-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9136141-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778740-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009117692-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8502362-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8383487-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8916965-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9305859-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013025603-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013025576-A1 |
| priorityDate |
2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |