http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4340226-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbd7063eee731fa36db57b14b15418d3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-763 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-763 |
| filingDate | 1993-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb60e8e6b26c46db560c4aaa2492c55d |
| publicationDate | 1995-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-4340226-A1 |
| titleOfInvention | Component with isolation region structure and method for producing the same |
| abstract | Semiconductor element comprises: (a) several trenches with narrow (51a,51b) and wide (51c,51d) trenches formed in the Si substrate (41); (b) a 1st insulating film (53) formed on the base surface and the oppositely lying side surfaces of each narrow trench and each wide trench, and having small thickness; (c) a 2nd insulating film (59) formed on the base of each wide trench and having large thickness; (d) a semiconducting film (61) filled in the trenches; (e) a 3rd insulating film (43) formed over the active regions of low thickness; and (f) a 4th insulating film (63) formed over the semiconducting film of low thickness. Prodn. of the element is also claimed. |
| priorityDate | 1993-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.