http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62211938-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1986-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba62a800dd9ec26820f62b96065a69fb |
| publicationDate | 1987-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S62211938-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To bring a field insulating film into a microscopic state by a method wherein a groove-like etching is performed on the region where the field insulating film will be formed, then after an oxidization and etching preventing film has been coated on the side face and the like of the groove part, the field insulating film and a channel cut layer are formed. n CONSTITUTION: An SiO 2 film 22 is grown on a P-type silicon substrate 21, and a polycrystalline silicon film 23 and an Si 3 N 4 film 24 are coated thereon. Then, a window is provided on a region 26, where a field insulating film will be formed, by performing a patterning on the films 22, 23 and 24 using a resist film 25 as a mask. Subsequently, a recessed groove part 27 is formed by performing an anisotropic etching on the region 26 using the films 23, 24 and 25 as a mask. Then, the film 26 is removed. The flat-surfaced film 24 is then removed by performing an anisotropic etching on the film 28 whereon an Si 3 N 4 film is coated on the whole surface including the groove part 27, and only the film 23 in the region 26 and the film 28 coated on the side face of the film 24 are left. Then, a field oxide film 29 is formed in the groove 27 and, at the same time, a channel-cut layer 30 is laid out. n COPYRIGHT: (C)1987,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5248350-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63271956-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5182227-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5696020-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4340226-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06302685-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4340226-C2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5298451-A |
| priorityDate | 1986-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 21.