http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022260476-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f94790cf5bf17ef5799ba79a953aa57 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45cdddb400bee50bc189d69a993bbcf7 |
| publicationDate | 2022-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2022260476-A1 |
| titleOfInvention | Power semiconductor device manufacturing method |
| abstract | An embodiment of the present invention relates to a power semiconductor manufacturing method comprising a step of forming an active layer on a SiC substrate, wherein the step of forming an active layer can comprise: a step of spraying source gas onto the SiC substrate; a primary purging step of spraying purge gas after stopping source gas spraying; a step of spraying reactant gas after stopping primary purge spraying; and a secondary purging step of spraying purge gas after stopping reactant gas spraying. Therefore, according to embodiments of the present invention, an active layer can be formed at low temperature. Thus, a substrate or a thin film formed thereon can be prevented from being damaged by high-temperature heat. In addition, power or time for increasing the temperature of a substrate for active layer formation can be saved, and overall process time can be reduced. |
| priorityDate | 2021-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.