http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200003760-A

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filingDate 2019-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0741fe2175cc35526506a790c9ba6ec
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publicationDate 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200003760-A
titleOfInvention Method for Forming Thin Film
abstract The present invention includes the steps of sequentially spraying a source gas, a first purge gas, a reaction gas reacting with the source gas, and a second purge gas on the substrate to form a single atomic layer thin film; Removing impurities of the single atomic layer thin film through plasma treatment to successively remove impurities of the single atomic layer thin film after forming the single atomic layer thin film; And forming a complete thin film on the substrate by repeatedly performing a single cycle in which the forming of the single atomic layer thin film and the removing of the impurities of the single atomic layer thin film are performed continuously. will be.
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