| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate |
2014-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_359111b3bcff90e04828d04d31cce88b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1eacf98b50d4b41c9b595d46fa406bc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99d924020bf9c301d3b81af2dbf0e2f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b20542570efe87491682537d9577c0b6 |
| publicationDate |
2014-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140102148-A |
| titleOfInvention |
Method for producing group iii nitride semiconductor |
| abstract |
A group III nitride semiconductor having reduced threading dislocation density and a uniform Ga-polar surface is provided. A capping layer is formed on a buffer layer containing Al as an essential element at a temperature lower than a temperature at which an oxide of an element forming the buffer layer is formed. A substrate having the buffer layer covered by the capping layer is thermally treated at a temperature higher than a temperature at which a crystal of a body semiconductor grows without exposing the surface of the buffer layer. The substrate temperature is decreased to a temperature at which the crystal of the body semiconductor grows, and the body semiconductor is grown. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022260476-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220123780-A |
| priorityDate |
2013-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |