| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2016-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aaa4ee2c6117aceb641f98a623d536cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c3b251f665e6da6f993d257d1087d5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d86ad8272a5335536fc7b3d64dfba7d |
| publicationDate |
2017-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2017138247-A1 |
| titleOfInvention |
Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device |
| abstract |
A silicon carbide epitaxial substrate according to the present disclosure is provided with: a silicon carbide single-crystal substrate having a first major surface; a first silicon carbide layer on the silicon carbide single-crystal substrate which contains a carrier of a first concentration; and a second silicon carbide layer on the first silicon carbide layer which contains a carrier of a second concentration smaller than the first concentration, and which includes a second major surface on the opposite side from the first major surface. In a carrier concentration profile along a direction in which the first silicon carbide layer and the second silicon carbide layer are stacked, a transition region in which the carrier concentration is varied between the first concentration and the second concentration has a width of not more than 1 μm. The ratio of standard deviation of the second concentration to an average value of the second concentration, which is defined as the uniformity of the second concentration in a central region within 60 mm from the center of the second major surface, is not more than 5%. The central region has an arithmetic mean roughness of not more than 0.5 nm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112470255-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2020017208-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020017208-A1 |
| priorityDate |
2016-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |