http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004343133-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2004-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2e7d3a80070ccec0118ff49e4b965a2 |
| publicationDate | 2004-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004343133-A |
| titleOfInvention | Silicon carbide manufacturing method, silicon carbide and semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To enable production with sufficient productivity while adding impurities under high controllability without being restricted by an impurity source or impurity concentration or a depth limitation of an impurity addition range. Provided are a method for manufacturing silicon carbide, silicon carbide, and a semiconductor device. SOLUTION: A single crystal silicon substrate 4 is set on a plate 3 in a CVD apparatus 10, heated to 1200 ° C. by a heating means 5, an H 2 gas atmosphere is formed in a film forming chamber 1, and then a SiH 2 Cl 2 is formed. gas was supplied for 5 seconds (the formation of silicon layer), then stop the SiH 2 Cl 2 gas N 2 gas was supplied for 5 seconds (N to the silicon layer (donor) added), then N 2 gas A unit process consisting of stopping and supplying a C 2 H 2 gas for 5 seconds (carbonization of an N-added silicon layer) is repeated 2000 times, and a cubic silicon carbide film is epitaxially grown on a substrate 4 (silicon substrate). To form [Selection diagram] Fig. 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012041204-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7166523-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008091656-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8324631-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007075951-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014143416-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007103966-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108463871-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007283411-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007283412-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017138247-A1 |
| priorityDate | 2004-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.