http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012041204-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 |
| filingDate | 2010-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36016a844e8897bbe2f2e1f1d910c314 |
| publicationDate | 2012-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012041204-A |
| titleOfInvention | Method for manufacturing cubic silicon carbide film and method for manufacturing substrate with cubic silicon carbide film |
| abstract | A method of manufacturing a cubic silicon carbide film and a substrate with a cubic silicon carbide film capable of growing a high-quality cubic silicon carbide film with few crystal defects at high speed even when the epitaxial growth temperature is lowered. A manufacturing method is provided. According to the method of manufacturing a cubic silicon carbide film of the present invention, a gas containing carbon is introduced onto a silicon substrate, and the silicon substrate is rapidly heated to the epitaxial growth temperature of the cubic silicon carbide to obtain a surface of the silicon substrate. A first step of forming a cubic silicon carbide film by carbonizing carbon, and containing carbon on the cubic silicon carbide film while maintaining the cubic silicon carbide film at an epitaxial growth temperature of the cubic silicon carbide. A second step of introducing a gas containing silicon and a gas and further epitaxially growing the cubic silicon carbide film; [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017186199-A |
| priorityDate | 2010-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.