| abstract |
PROBLEM TO BE SOLVED: To provide a means for suppressing a micropipe defect in a substrate from being inherited by a SiC film, to provide a semiconductor device provided with a SiC thin film having few micropipe defects and good crystallinity, and its manufacture. The aim is to provide a method. SOLUTION: An impurity is not introduced by a CVD method. The step of epitaxially growing the undoped layer 22 as the iC layer and the step of epitaxially growing the impurity doped layer 23 as the SiC layer into which pulsed nitrogen is introduced are alternately repeated to form the suppression layer 30 on the SiC substrate 3b. Since the nitrogen concentration profile in the suppression layer 30 is steep, the transfer of the micropipe can be suppressed. By depositing a SiC layer serving as an active region on the suppression layer 30 and forming a semiconductor device, a semiconductor device utilizing SiC's high withstand voltage and high-temperature operability can be manufactured. |