| abstract |
The present invention relates to a cleaning agent for semiconductor substrates, which is used in a step after a chemical mechanical polishing step for a semiconductor substrate that comprises a cobalt-containing film and a copper wiring film or a copper alloy wiring film. This cleaning agent for semiconductor substrates is characterized by containing (A) an organic acid represented by a general formula set forth in the description, (B) an amine selected from among (B-1) diamines, (B-2) amidines, (B-3) azoles and (B-4) pyrazines or pyrimidines respectively represented by general formulae set forth in the description, (C) a hydroxyl amine derivative and (D) a deoxidizing agent represented by a general formula set forth in the description, and is also characterized by being an aqueous solution having a pH of 10 or more. The present invention also relates to a method for processing a semiconductor substrate surface comprising a cobalt-containing film and a copper wiring film or a copper alloy wiring film. This method for processing a semiconductor substrate surface is characterized by using the above-described cleaning agent. |