| abstract |
The present invention relates to cleaning of a semiconductor wafer after chemical mechanical planarization (CMP) of the wafer during manufacture of a semiconductor device, and provides an alkaline chemical for post-CMP cleaning of the wafer including metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the semiconductor surface without fully etching the metal, leaving deposits on the surface, giving enough contaminants, and at the same time Protect metals from oxidation and corrosion. In addition, at least one strong chelator is present to complex metal ions in the solution to facilitate metal removal from the dielectric and prevent redeposition on the wafer. [Selection figure] None |