| abstract |
This disclosure addresses wafer cleaning after chemical mechanical planarization (CMP) of a semiconductor wafer during the manufacture of a semiconductor device. An alkaline chemical for post-CMP cleaning of a wafer containing a metal, particularly copper, interconnect, is disclosed. Residual slurry particles, especially copper and other metal particles, can sufficiently etch the metal, leave deposits on the surface, or subject the wafer to sufficient contamination while protecting the metal from oxidation and corrosion. Without being removed from the wafer surface. Also, at least one strong chelator is present to form a complex with metal ions in solution, which facilitates removal of the metal from the dielectric and prevents redeposition on the wafer. [Selection figure] None |