| abstract |
[Problem] To provide: a resist underlayer film for lithography, whereby it becomes possible to improve the exposure light sensitivity of an EUV resist and reduce an out gas generated during the exposure with EUV light; and a composition for forming a resist underlayer film, which can be used for the formation of the above-mentioned underlayer film. [Solution] A composition for forming a resist underlayer film for EUV lithography, which contains, as a silane, a hydrolysable silane, a hydrolysate or a hydrolysis/condensation product of the hydrolysable silane, or a mixture thereof, wherein the hydrolysable silane comprises a combination of tetramethoxysilane, an alkyltrimethoxysilane and an aryltrialkoxysilane, and the aryltrialkoxysilane is represented by formula (1) (wherein R 1 represents an aromatic ring comprising a benzene ring or a naphthalene ring or a ring containing an isocyanuric acid structure; R 2 represents a substituent for a hydrogen atom in an aromatic ring, and is a halogen atom or an alkoxy group having 1 to 10 carbon atoms; and X represents an alkoxy group having 1 to 10 carbon atoms, an acyloxy group having 2 to 10 carbon atoms, or a halogen group). |