| abstract |
Disclosed is a method for producing a porous insulating film which is useful as an insulating film in a semiconductor device. Also disclosed is a method for producing a porous insulating film which has good adhesion to semiconductor materials which are in contact with the upper and lower interfaces of the insulating film. A porous insulating film is grown on a semiconductor substrate by introducing a gas into a plasma, which gas contains at least one or more molecular vapors of organic silica compounds, each having a ring silica skeleton in a molecule to which silica skeleton at least one or more unsaturated hydrocarbon groups are bonded. |