http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009177023-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2008-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34822bb6efd4e5e27304f0efecec57cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4901c9c0e18eb8f9f0c4805be4e7da48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_179af47ea6f9c9ca61c1a6621cda99ed |
| publicationDate | 2009-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009177023-A |
| titleOfInvention | Porous insulating film, method for forming the same, and method for manufacturing a semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To achieve both low dielectric constant and high reliability due to discharge instability due to low energy plasma and deterioration of adhesion between adjacent films in multilayer wiring using a hydrocarbon-containing porous interlayer insulating film Met. SOLUTION: A porous insulating film 10 of the present invention is formed by plasma CVD using organosiloxane as a raw material, and a first layer 11 formed by plasma CVD using a plasma of first electron energy. A second layer 12 formed by plasma CVD using a plasma of a second electron energy on the first layer 11, wherein the first electron energy is greater than the second electron energy. Features. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013197575-A |
| priorityDate | 2008-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.