| abstract |
Provided is a multi-layered wiring structure, in which there are laminated at least one circuit element formed in a semiconductor substrate or a semiconductor layer, and a plurality of unit wiring structures so formed on the semiconductor substrate or the semiconductor layer as are electrically connected with the aforementioned at least one circuit element, and having a wire and a via hole plug formed by filling a wiring groove and a via hole formed in an insulating film, with a metal wire. In this multi-layered wiring structure, the carbon/silicon ratio in an inter-wiring-layer low-dielectric-constant film is higher than the carbon/siliconratio in an inter-via-layer low-dielectric-constant film. In order to manufacture the multi-layered wiring structure, an overlying second SiOCH low-dielectric-constant film is worked, when it is grooved and stopped on an underlying first SiOCH low-dielectric-constant film, by using an end point detection according to an emission spectroscopy of a mixed gas plasma containing at least N2 and CHxFy. |