http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010129921-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2008-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ea93bfad3b1c9b25127e03527f890c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d45cdf79bbe3ca67374e037143de3c29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3feba73b9b01fc0bf2b7ef48294a72c4 |
| publicationDate | 2010-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010129921-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | An object of the present invention is to reduce deterioration of insulation reliability and improve the reliability of copper wiring. A semiconductor device of the present invention includes a semiconductor substrate 10, a first porous insulating film 11a formed on the semiconductor substrate 10 including silicon (Si), carbon (C), and oxygen (O); The second porous insulating film 11b, the first copper wiring 12a embedded in the first porous insulating film 11a, and the second embedded in the second porous insulating film 11b, respectively. The copper wiring 12b and the copper via 22, the first metal cap film 13a formed on the second copper wiring 12a, and the second metal cap film 13b formed on the second copper wiring 12b. Have. The first and second porous insulating films 11a and 11b have at least an upper layer C / Si ratio of 1.5 or more, and are contained in at least the upper layers of the first and second porous insulating films 11a and 11b. The maximum hole diameter is 1.3 nm or less. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012023245-A |
| priorityDate | 2008-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.