| abstract |
An increase in effective capacitance between wirings is suppressed. A semiconductor device includes an insulating film made of cyclic siloxane having a six-membered ring structure, a wiring groove formed in the insulating film, and a metal film (wiring metal) embedded in the wiring groove. Wiring 10 configured in such a manner. In the semiconductor device 100, the modified layer 13 having more carbon atoms per unit volume and / or more nitrogen atoms than the inside of the insulating film 11 is formed on the bottom surface of the wiring trench 12. [Selection] Figure 1 |