| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
2019-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b568ac0df07bb463f635be086ed7a256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13a502cfaf75a7d3e25ac26ad333610b |
| publicationDate |
2021-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10978394-B2 |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an infrared absorption intensity corresponding to a bond between silicon and oxygen is defined as an abundance ratio, the abundance ratio in the first defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. The abundance ratio in the second defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. |
| priorityDate |
2018-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |