http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020021869-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2018-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13a502cfaf75a7d3e25ac26ad333610b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b568ac0df07bb463f635be086ed7a256 |
| publicationDate | 2020-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2020021869-A |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | A semiconductor device in which reliability of TDDB between wirings located in different layers is ensured. In a semiconductor device SDV, a first defect formation prevention film DPF1 is formed on a first wiring ML1 side, and a second defect formation prevention film DPF2 is formed on a second wiring ML2 side. Assuming that the ratio of the infrared absorption intensity corresponding to the bond between silicon and hydrogen to the infrared absorption intensity corresponding to the bond between silicon and oxygen is the abundance ratio, the abundance ratio in the first defect formation prevention film DPF1 is the second interlayer insulating film. It is smaller than the abundance ratio in IL2. The abundance ratio in the second defect formation prevention film DPF2 is smaller than the abundance ratio in the second interlayer insulating film IL2. [Selection diagram] Fig. 1 |
| priorityDate | 2018-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.