| abstract |
A polishing fluid which comprises an oxidizing agent, a metal oxide dissolving agent, an anti-corrosive agent for a metal and water and has a pH of 2 to 5, wherein the metal oxide dissolving agent comprises one or more selected from among one or more acids (A group) selected from acids having a dissociation constant (pKa) of its first dissociatable acidic group of less than 3.7, exclusive of the following four acids: lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid, and ammonium salts of said A group acids and esters of said A group acids, and one or more selected from among one or more acids (B group) selected from acids having a dissociation constant (pKa) of its first dissociatable acidic group of 3.7 or more and the above four acids, and ammonium salts of said B group acids and esters of said B group acids, or wherein the anti-corrosive agent for a metal comprises one or more of a group of aromatic compounds having a triazole skeleton, and one or more of a group of compounds having any of a pyrimidine skeleton, an imidazole skeleton, a guanidine skeleton, a thiazole skeleton and a pyrazole skeleton. The polishing fluid allows the polishing with an enhanced polishing rate, a reduced etching rate and a reduced polishing friction, which results in the production, with high productivity, of a semiconductor device having a metal wiring being reduced in dishing and erosion. |