| abstract |
A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or (I), wherein M is Zr, Hf, Z, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R?1 and R2¿ is same or different and is independently selected from H, aryl, perfluoraryl, C¿1?-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR?1R2)¿4-x-y or (II), wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R?1 and R2¿ is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C¿1?-c8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity. |