| abstract |
Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:n nX m R 1 n H p Si(NR 2 R 3 ) 4-m-n-p In nwherein X is selected from Cl, Br, I; R 1 is selected from linear or branched C 1 -C 10 alkyl group, a C 2 -C 12 alkenyl group, a C 2 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl, and a C 6 -C 10 aryl group; R 2 is selected from a linear or branched C 1 -C 10 alkyl, a C 3 -C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; R 3 is selected from a branched C 3 -C 10 alkyl group, a C 3 -C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R 2 and R 3 are linked or not linked to form a ring. |