| abstract |
A resist composition is provided comprising (A) a fluorine-containing polymer, (B) a base resin, (C) an acid generator, and (D) a solvent mixture of a first solvent which is a C 5 -C 8 ketone, C 4 -C 6 alcohol, C 3 -C 6 ether or C 4 -C 9 ester and a second solvent which is a lactone ring-containing C 6 -C 9 compound. A pattern is formed by coating the resist composition, prebake, exposure, and development. In immersion lithography, the resist film is improved in water slip. In EB or EUV lithography, outgassing is suppressed and edge roughness is reduced. |