http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9499925-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 |
| filingDate | 2014-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8547b5de250b0505a4158fc1b9523776 |
| publicationDate | 2016-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9499925-B2 |
| titleOfInvention | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same |
| abstract | A group III nitride crystal substrate is provided in which a uniform distortion at a surface layer of the crystal substrate represented by a value of |d 1 −d 2 |/d 2 obtained from a plane spacing d 1 at the X-ray penetration depth of 0.3 μm and a plane spacing d 2 at the X-ray penetration depth of 5 μm is equal to or lower than 1.9×10 −3 , and the main surface has a plane orientation inclined in the <10-10> direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided. |
| priorityDate | 2005-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 84.