| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate |
2008-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec4aa3f1ba55f9f1eb9f7318cc65fc3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06bdc247272bf8871948fa94720009f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a4e007981ffbdf4fbf52b9c75080bb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_116fe4c64e3eb3a653c32d6f05b9e9ce |
| publicationDate |
2009-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009170798-A |
| titleOfInvention |
Group III nitride semiconductor laser |
| abstract |
There is provided a nitride semiconductor laser device capable of reducing the influence of piezoelectric polarization, having a sufficiently low dislocation density, and having a structure suitable for industrially producible GaN wafers. In a group III nitride semiconductor laser, a semiconductor stack is provided on a main surface of a substrate made of hexagonal n-type gallium nitride. The p-side electrode 17 is provided on the p-type gallium nitride semiconductor region 23 of the semiconductor stack 15. The n-side electrode 19 is provided on the back surface 13 b of the substrate 13. The main surface 13a of the substrate 13 is inclined at an off angle of 20 degrees or more and 45 degrees or less in the a-axis direction of gallium nitride from the c plane of gallium nitride. Referring to the orthogonal coordinate system Cr, the c coordinate axis is directed to the c axis of the hexagonal n-type gallium nitride of the substrate 13. The angle formed by the crystal axis vector C and the normal line N of the main surface 13a of the substrate 13 is the above-described off angle. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011159771-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8828140-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772064-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570540-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8401048-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011135015-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10078059-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102668282-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9499925-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011082459-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011077852-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8771552-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9708735-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011108720-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011058870-A1 |
| priorityDate |
2008-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |