| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate |
2008-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0c8b6e31ce8272a6acba47bceff3f7a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81ae55a8fb2d20e14fd1059131a1e225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82d7ec343f8f9b0415970bc6b6c443cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d |
| publicationDate |
2009-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009238772-A |
| titleOfInvention |
Epitaxial substrate and method for manufacturing epitaxial substrate |
| abstract |
An epitaxial substrate capable of reducing variation in In composition in an active layer by using a GaN substrate having variation in off-angle within the substrate surface, and a method for manufacturing the epitaxial substrate are provided. An epitaxial substrate includes a GaN substrate having a principal surface that is inclined with respect to a c-plane or a -c-plane of a GaN crystal, and an InGaN well layer a provided on the principal surface of the GaN substrate. And an active layer 23. The central value of the distribution of angles (off angles) between the c-plane or -c-plane and the main surface 10a in the plane of the main surface 10a is in the range of 15 ° to 60 °, and is in the plane of the main surface 10a. The difference between the maximum value and the minimum value of the off-angle is 0.3 ° or more. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9708735-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9499925-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11662374-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012049337-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018168706-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011058870-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8828140-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102464462-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10078059-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011108720-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190122695-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8771552-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011093481-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570540-B2 |
| priorityDate |
2008-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |