| abstract |
(57) [Problem] To provide a nitride-based semiconductor light-emitting device having a low oscillation threshold current value and improved reliability. SOLUTION: On a substrate, a nitride-based active layer 6 sandwiched between at least one of a clad layer and a guide layer made of a nitride semiconductor and made of a nitride semiconductor containing In and Ga is provided. In the semiconductor light emitting device, the quantum well structure active layer 6 suppresses surface movement of In atoms and Ga atoms during crystal growth in one direction in the quantum well plane and not in the opposite direction. It is formed by the grown crystal growth. |