| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
| filingDate |
2013-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f6a2a59814a2193661eb07741dc21a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fa07e9c7cfc68777285f4fa06b5aff2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_006e393fd54787f387eafb129d531fd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55cadd8360064d90e1f38dc567718363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac5f6910f8082400191754842177a7d3 |
| publicationDate |
2015-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8969169-B1 |
| titleOfInvention |
DRAM MIM capacitor using non-noble electrodes |
| abstract |
A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158701-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879248-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3930016-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022123103-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11264448-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476253-B2 |
| priorityDate |
2013-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |