| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7e7eed7519ff02efabec92b52f7d4af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec6c20831a90103ad3a46ef9273aa86a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66bd211305b0d9dac123b623a4b866ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_174a6969821016f877be92a62cbbb088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e896be16fc9f53a0842448c0d1f28fc6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-435
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-43 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2011-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdff29b3af7f0a27f6b49177c109117c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f58c9c45fbb2ce374c09b03602f1417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13406d73eced3c6cff85b4d36952804a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef5c34d37e6cd11def2ab298593f8b4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61e42f87b31b59fd354e0423265eb35f |
| publicationDate |
2012-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012262835-A1 |
| titleOfInvention |
Method for fabricating a dram capacitor |
| abstract |
A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal compound and the conductive binary metal compound is annealed in a reducing atmosphere to promote the formation of a desired crystal structure. The binary metal compound may be a metal oxide. Annealing the metal oxide (i.e. molybdenum oxide) in a reducing atmosphere may result in the formation of a first electrode material (i.e. MoO 2 ) with a rutile-phase crystal structure. This facilitates the formation of the rutile-phase crystal structure when TiO 2 is used as the dielectric layer. The rutile-phase of TiO 2 has a higher k value than the other possible crystal structures of TiO 2 resulting in improved performance of the DRAM capacitor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200094225-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9383334-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8722504-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991721-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8813325-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015060953-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019198606-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015102460-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111587482-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102433698-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013071988-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553673-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8969169-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I563636-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466660-B2 |
| priorityDate |
2011-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |