| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-92 |
| filingDate |
2012-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82551bf08a2232363d4a7eec30c17b03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed8651642c286df801763663264d88d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31e344f6cad4bf089e28f5597ff2ae0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5440d2ef11aa0f17d89b87d1ae6e5da5 |
| publicationDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8815695-B2 |
| titleOfInvention |
Methods to improve leakage for ZrO2 based high K MIM capacitor |
| abstract |
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015087130-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8969169-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573701-B2 |
| priorityDate |
2012-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |