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filingDate 2011-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2013-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8481384-B2
titleOfInvention Method for producing MIM capacitors with high K dielectric materials and non-noble electrodes
abstract A method of producing a Metal-Insulator-Metal (MIM) capacitor stack through doping to achieve low current leakage and low equivalent oxide thickness is disclosed. A high K dielectric material is deposited on a non-noble electrode; the dielectric material is doped with oxides from group IIA. The dopant increases the barrier height of metal/insulator interface and neutralizes free electrons in dielectric material, therefore reduces the leakage current of MIM capacitor. The electrode may also be doped to increase work function while maintaining a rutile crystalline structure. The method thereby enhances the performance of DRAM MIM capacitor.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015087130-A1
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