Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98dec5ecb3c8c0b50a05479fe22ccaae http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_25f3c4db422d441db49302e8fc79e1b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88d7587e5acee6b60ed1c0358cde6a9f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-122 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate |
2010-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eca5a706469c1473729e8beca5f77e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96926ca4549cb0f5ebddf8df98610d45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db41bd35fc60b57e62e9e31d00aa06d2 |
publicationDate |
2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8808975-B2 |
titleOfInvention |
Positive resist composition for immersion exposure and pattern-forming method using the same |
abstract |
A positive resist composition for immersion exposure comprises: (A) a resin capable of increasing its solubility in an alkali developer by an action of an acid, and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, wherein the acid satisfies conditions of V≧230 and V/S≦0.93 taking van der Waals volume of the acid as V (Å 3 ), and van der Waals surface area of the acid as S (Å 2 ). |
priorityDate |
2005-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |