Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
filingDate |
2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73318a510569d301679166a828cb6450 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11276cd7b630770ff1eab498eaf58569 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c745cc5d8b5cba025d944e864981d9f4 |
publicationDate |
2014-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8785333-B2 |
titleOfInvention |
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
abstract |
A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times. The cycle includes forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by supplying a first precursor gas containing the predetermined element and the halogen group and a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition where the borazine ring skeleton in the borazine compound is maintained. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431240-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014073142-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910217-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9385013-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9559185-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9487861-B2 |
priorityDate |
2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |