| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b5a771839d693a5a67b0ca03a80eddd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66537 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70 |
| filingDate |
2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_203f4cb73c33fe1b5acd866e6512ca49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c735e432d3fa63ec8c767a7685e9be7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_998a21d37de11439a25542503136c923 |
| publicationDate |
2014-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8686511-B2 |
| titleOfInvention |
Source/drain extension control for advanced transistors |
| abstract |
A planar transistor with improved performance has a source and a drain on a semiconductor substrate that includes a substantially undoped channel extending between the source and the drain. A gate is positioned over the substantially undoped channel on the substrate. Implanted source/drain extensions contact the source and the drain, with the implanted source/drain extensions having a dopant concentration of less than about 1×10 19 atoms/cm 3 ′, or alternatively, less than one-quarter the dopant concentration of the source and the drain. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9773886-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006843-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014167157-A1 |
| priorityDate |
2010-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |