| abstract |
A structure and method of fabrication thereof relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced σV T compared to conventional bulk CMOS and can allow the threshold voltage V T of FETs having dopants in the channel region to be set much more precisely. A novel dopant profile indicative of a distinctive notch enables tuning of the V T setting within a precise range. This V T set range may be extended by appropriate selection of metals so that a very wide range of V T settings is accommodated on the die. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. The result is the ability to independently control V T (with a low σV T ) and V DD , so that the body bias can be tuned separately from V T for a given device. |