| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_96bfbc0ea50b96f00388c0d4802cd477 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66537
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate |
2016-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_419cad2603afb03973603b7ff5c4888a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05de92edd438216f5f4b6714762fecac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6d03cb08a2266dacc2104f3b7541d70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e446d304e46482bac6af1ce408df2eb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dd23eac83d63738b63d6f8bf0da0113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a095c515a084e0d3446ed216388c519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2efa0a6de1cb052715cc69312174ef60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1242c07a026893b7c15f64423fb31848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb58c127124ac115bf9d6a11f71d7893 |
| publicationDate |
2018-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10014387-B2 |
| titleOfInvention |
Semiconductor structure with multiple transistors having various threshold voltages |
| abstract |
A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element. Different characteristics include doping concentration and depth of implant. In addition, a different characteristic may be achieved by concurrently implanting the second screening region in the second and third transistor element followed by implanting an additional dopant into the second screening region of the third transistor element. |
| priorityDate |
2012-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |