| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bffbafbeba7752b0662dcb38f1f3d6f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ff352fafdfd98bc593de28ea411a2ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_faedf58a4200db9aa2213b51db7da873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_442a862de0eb7694d70a8be67299856f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f8c82cf932bd5acc32b6434f11b54d16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2011-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcd31c8fe1d50bfff9598503ce2608f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_672c88ea4e3232932ad55f9eda852813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67de83d892ca2a2192323ea487926162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96af1c49118106b79ad805d311ba8785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daeeea050f8bd9d604ce34825913e6e6 |
| publicationDate |
2013-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8476142-B2 |
| titleOfInvention |
Preferential dielectric gapfill |
| abstract |
Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653357-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013252440-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11120997-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015020973-A1 |
| priorityDate |
2010-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |